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| BUZ 11 Not for new design SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 11 VDS 50 V ID 30 A RDS(on) 0.04 Package TO-220 AB Ordering Code C67078-S1301-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 30 Unit A ID IDpuls 120 TC = 29 C Pulsed drain current TC = 25 C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 30 1.9 mJ ID = 30 A, VDD = 25 V, RGS = 25 L = 15.6 H, Tj = 25 C Gate source voltage Power dissipation 14 VGS Ptot 20 75 V W TC = 25 C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 1.67 75 E 55 / 150 / 56 C K/W Semiconductor Group 07/96 BUZ 11 Not for new design Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 3 0.1 10 10 0.03 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 A VDS = 50 V, VGS = 0 V, Tj = 25 C VDS = 50 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS 100 nA 0.04 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 19 A Semiconductor Group 2 07/96 BUZ 11 Not for new design Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 10 17 1000 450 165 - S pF 1350 680 250 ns 15 25 VDS 2 * ID * RDS(on)max, ID = 19 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Rise time tr 55 85 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Turn-off delay time td(off) 120 160 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Fall time tf 80 110 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Semiconductor Group 3 07/96 BUZ 11 Not for new design Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A 1.6 80 0.1 30 120 V 1.8 ns C Values typ. max. Unit TC = 25 C Inverse diode direct current,pulsed ISM - TC = 25 C Inverse diode forward voltage VSD trr Qrr VGS = 0 V, IF = 60 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 11 Not for new design Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 10 V 32 80 W A Ptot ID 60 24 50 20 40 16 30 12 20 8 10 0 0 20 40 60 80 100 120 C 160 4 0 0 20 40 60 80 100 120 C 160 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 3 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 K/W A ID t = 1.3s p ZthJC 10 2 10 0 /ID = ) on S( RD 10 s V D S 100 s 1 ms 10 -1 D = 0.50 0.20 10 1 10 ms 0.10 10 -2 0.05 0.02 0.01 single pulse 10 0 DC 0 10 10 1 V 10 2 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 11 Not for new design Typ. output characteristics ID = (VDS) parameter: tp = 80 s 70 A 60 Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 0.13 Ptot = 75W l k j i h VGS [V] 0.11 a b c d e f ID 55 50 45 40 35 30 25 20 15 10 5 0 g a b c 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 RDS (on) 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 VGS [V] = a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 fd e e f g h di j k g h i k j c l b a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0 10 20 30 40 50 A 65 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max 65 A 55 parameter: tp = 80 s, VDS2 x ID x RDS(on)max 26 S 22 ID 50 45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 V 10 gfs 20 18 16 14 12 10 8 6 4 2 0 0 10 20 30 40 A ID 60 VGS Semiconductor Group 6 07/96 BUZ 11 Not for new design Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 19 A, VGS = 10 V 0.13 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 0.11 98% RDS (on) 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 -60 -20 20 60 100 C 160 VGS(th) 3.6 3.2 2.8 2.4 typ 2% 98% typ 2.0 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 3 nF C 10 0 A IF Ciss Coss 10 2 10 -1 Crss 10 1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 10 0 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 11 Not for new design Avalanche energy EAS = (Tj ) parameter: ID = 30 A, VDD = 25 V RGS = 25 , L = 15.6 H 15 mJ V Typ. gate charge VGS = (QGate) parameter: ID puls = 56 A 16 EAS 12 11 10 9 8 7 6 5 4 3 2 1 0 20 40 60 80 100 120 C 160 VGS 12 0,2 VDS max 0,8 VDS max 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 nC 50 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 60 V V(BR)DSS 57 56 55 54 53 52 51 50 49 48 47 46 45 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 07/96 BUZ 11 Not for new design Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96 |
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